- 您现在的位置：买卖IC网 > Sheet目录322 > DS28DG02E-3C+T (Maxim Integrated)IC EEPROM 2KBIT 2MHZ 28TSSOP
DS28DG02: 2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
LOW-Level Input Voltage
V IL
0.8
V
HIGH-Level Input Voltage
Output Transition Time
Power-On Setting Time
V IH
t OT
t POS
Low-current mode
(Note 9)
High-current mode
(Note 10)
High-current mode
(Note 11)
0.7 ×
V CC
V CC +
0.5V
1
25
25
V
μs
μs
PIO Read Setup Time
PIO Read Hold Time
t PS
t PH
(Note 5)
(Note 5)
100
100
ns
ns
Leakage Current
I L
High impedance, at
V CCMAX
-1
+1
μA
RSTZ PIN (Note 12) (See Figures 6, 7)
LOW-Level Output Voltage V OL
At 4mA sink current
0.3
V
LOW-Level Input Voltage
V IL
0.3 ×
V CC
V
Input Leakage Current
Minimum V CC for Valid RSTZ
I L
V POR
(Notes 5, 13)
-1
+1
2.13
μA
V
RSTZ Pulse Duration
Manual Reset Pulse Width
Manual Reset Release
Threshold
Manual Reset Debounce Time
RSTZ Delay
t RST
t MPW
V TRMS
t DEB
t DEL
(Note 14)
V CC falling below V TRIP
(Note 15)
176
1
328
V IL
t RST
532
90
ms
μs
V
ms
μs
ALMZ, WDOZ PINS
LOW-Level Output Voltage
V OL
At 4mA sink current
0.3
V
WDI PIN
LOW-Level Input Voltage
V IL
0.3 ×
V CC
V
HIGH-Level Input Voltage
Input Leakage Current
Minimum Input Pulse Width
V IH
I L
t MPW
0.7 ×
V CC
-1
1
0.88
1.64
V CC +
0.5V
+1
2.66
V
μA
μs
Watchdog Timeout
t WD
User programmable
0.44
0.22
0.82
0.41
1.33
0.67
s
WPZ, SI, SCK, CSZ PINS
0.11
0.20
0.33
LOW-Level Input Voltage
V IL
0.3 ×
V CC
V
HIGH-Level Input Voltage
Input Leakage Current
V IH
I L
0.7 ×
V CC
-1
V CC +
0.5V
+1
V
μA
SO PIN
LOW-Level Output Voltage
HIGH-Level Output Voltage
V OL
V OH
At 1mA sink current and
V CCmin
At 1mA source current
0.7 ×
V CC
0.2
V
V
Output Leakage Current
I L
High impedance, at
V CCmax
-1
+1
μA
3 of 34
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DS28E04S-100+T
IC EEPROM 4KBIT 16SOIC
DS28EC20+T
IC EEPROM 20KBIT TO92-3
DS301X
KWIK-CHG DESIGNATION STRIP SGL
DS3030W-100#
IC NVSRAM 256KBIT 100NS 256BGA
DS3045W-100#
IC NVSRAM 1MBIT 100NS 256BGA
DS3050W-100#
IC NVSRAM 4MBIT 100NS 256BGA
DS3065W-100#
IC NVSRAM 8MBIT 100NS 256BGA
DS3065WP-100IND+
IC SRAM 3.3V 8MB 34POWERCAP MOD
相关代理商/技术参数
DS28DG02EVKIT
功能描述:存储器 IC 开发工具 RoHS:否 制造商:STMicroelectronics 产品:Reference Boards 工具用于评估:M24LR64-R 存储容量:64 kbit 存储类型:EEPROM 工作电源电压:1.8 V to 5.5 V
DS28DG02G-3C+
功能描述:电可擦除可编程只读存储器 2Kb SPI 电可擦除可编程只读存储器 w/PIO RTC/Rst/Bat Mtr/Wtdg RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS28DG02G-3C+T
功能描述:电可擦除可编程只读存储器 2Kb SPI 电可擦除可编程只读存储器 w/PIO RTC/Rst/Bat Mtr/Wtdg RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS28E01-100
制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:带SHA-1引擎保护的1K位1-Wire EEPROM
DS28E01-100_12
制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1Kb Protected 1-Wire EEPROM with SHA-1 Engine
DS28E01-100+
功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS28E01G-100+R
制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1K-Bit Protected 1-Wire EEPROM with SHA-1 Engine
DS28E01G-100+T
制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1K-Bit Protected 1-Wire EEPROM with SHA-1 Engine